MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5S21130/D MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N *Chann.
10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.

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Datasheet Specifications

Part number: MRF5S21130R3
Manufacturer: Motorola
File Size: 439.29 KB
Datasheet: MRF5S21130R3_Motorola.pdf
Description: The RF MOSFET Line RF Power Field Effect Transistor

Features

* m f = 2080 MHz f = 2200 MHz Zsource VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource Ω 2.87
* j9.49 3.13
* j9.86 4.05
* j10.90 4.80
* j11.75 5.55
* j11.87 Zload Ω 1.51
* j2.97 1.52
* j2.54 1.59
* j2.

Applications

* at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s . To b e u s e d i n C l a s s A B f o r P C N
* P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2
* carrier W

MRF5S21130R3 Distributors

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MRF5S21130R3 The MOSFET Line Power Field Effect Transistor Motorola

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