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MRF5S21090LSR3, MRF5S21090LR3 RF Power Field Effect Transistors

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Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5S21090L/D The RF MOSFET Line .
9.

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This datasheet PDF includes multiple part numbers: MRF5S21090LSR3, MRF5S21090LR3. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
MRF5S21090LSR3, MRF5S21090LR3
Manufacturer
Motorola
File Size
608.37 KB
Datasheet
MRF5S21090LR3_Motorola.pdf
Description
RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF5S21090LSR3, MRF5S21090LR3.
Please refer to the document for exact specifications by model.

Features

* s Product, Go to: www. freescale. com MRF5S21090LR3 MRF5S21090LSR3 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 10 Pout, POWER (WATTS) W
* CDMA Gps IM3 ACPR VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz, f2 = 21

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA

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