* eescale Semiconductor ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W
* CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
* 30_C 25_C 85_C
* 30_C TC =
* 30_C IM3 85_C 25_C
* 30_C TYPICAL CHARACTE
MRF5S21045NR1 Datasheet (560.47 KB)
MRF5S21045NR1
Freescale Semiconductor
560.47 KB
Rf power field effect transistors.
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Freescale Semiconductor Technical Data
Document Number: MRF5S21045 Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channe.
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