MRF5S21090HSR3 Datasheet - Freescale Semiconductor

RF Power Field Effect Transistors

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21090H Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volt.

MRF5S21090HSR3 Features

* AVERAGE (dB)

* 20

* 30

* 40

* 50

* 60

* 70

* 80

* 90

* 100

* 110

* 120

* 25

* ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW

* IM3 @ 3.84 MHz BW

* 20

* 15

* 10

* 5 0 5 10 3.84 MHz C

MRF5S21090HSR3 General Description

9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 2.0 pF Chip Capacitor 0.1 µF Chip Capacitors 5.6 pF Chip Capacitor 5.1 pF Chip Capacitor 7.5 pF Chip Capacitor 1.2 pF Chip Capacitor 0.56 µF Chip Capacitors 1000 pF Chip Capacitor 470 µF, 35 V Electrolytic Capacitor 0.4 * 2.5 Variable Capacitors, G.

MRF5S21090HSR3 Datasheet (404.04 KB)