MRF5S21045MBR1_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF5S21045NBR1, MRF5S21045MBR1
Manufacturer:
Freescale Semiconductor
File Size:
560.47 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF5S21045NBR1, MRF5S21045MBR1.
Please refer to the document for exact specifications by model.
MRF5S21045NBR1, MRF5S21045MBR1, RF Power Field Effect Transistors
220 nF Chip Capacitor (1812) 6.8 pF 100B Chip Capacitors 6.8 µF Chip Capacitors (1812) 220 µF, 63 V Electrolytic Capacitor, Radial 1 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number 1812Y224KXA 100B6R8CW C
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev.
1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
Typical 2 - carrier W - CDMA Performan
MRF5S21045NBR1 Features
* eescale Semiconductor ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W
* CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
* 30_C 25_C 85_C
* 30_C TC =
* 30_C IM3 85_C 25_C
* 30_C TYPICAL CHARACTE
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