MRF5S21090LR3 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF5S21090LR3, RF Power Field Effect Transistors

9.1 pF Chip Capacitor, B Case 8.2 pF Chip Capacitor, B Case 2.0 pF Chip Capacitor, B Case 0.1 µF Chip Capacitors, B Case 5.6 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 7.5 pF Chip Capacitor, B Case 1.2 pF Chip Capacitor, B Case 0.56 µF Chip Capacitors, B Case 1000 pF Chip Capacitor, B C

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF5S21090L/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.

Typical 2 - carrier W - CDMA

MRF5S21090LR3 Features

* s Product, Go to: www.freescale.com MRF5S21090LR3 MRF5S21090LSR3 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 10 Pout, POWER (WATTS) W

* CDMA Gps IM3 ACPR VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz, f2 = 21