Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev.1, 7/2005 RF Power Field Effect Transistors N - Channe.
220 nF Chip Capacitor (1812) 6.
Features
* eescale Semiconductor
ηD, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W
* CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
* 30_C
25_C
85_C
* 30_C TC =
* 30_C
IM3 85_C 25_C
* 30_C
TYPICAL CHARACTE
Applications
* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, P
