MRF5S21090HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF5S21090HR3, RF Power Field Effect Transistors

9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 2.0 pF Chip Capacitor 0.1 µF Chip Capacitors 5.6 pF Chip Capacitor 5.1 pF Chip Capacitor 7.5 pF Chip Capacitor 1.2 pF Chip Capacitor 0.56 µF Chip Capacitors 1000 pF Chip Capacitor 470 µF, 35 V Electrolytic Capacitor 0.4 * 2.5 Variable Capacitors, G

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21090H Rev.

1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.

Typical 2 - carrier W - CDMA Performance: VDD = 28 Volt

MRF5S21090HR3 Features

* AVERAGE (dB)

* 20

* 30

* 40

* 50

* 60

* 70

* 80

* 90

* 100

* 110

* 120

* 25

* ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW

* IM3 @ 3.84 MHz BW

* 20

* 15

* 10

* 5 0 5 10 3.84 MHz C