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MRF5S21090HR3 - RF Power Field Effect Transistors

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9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 2.0 pF Chip Capacitor 0.1 µF Chip Capacitors 5.6 pF Chip Capacitor 5.1 pF Chip Capacitor 7.5 pF Chip Capacitor 1.2 pF Chip Capacitor 0.56 µF Chip Capacitors 1000 pF Chip Capacitor 470 µF, 35 V Electrolytic Capacitor 0.4 2.5 Variable Capacitors, G

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Datasheet Details

Part number MRF5S21090HR3
Manufacturer Freescale Semiconductor
File Size 404.04 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF5S21090HR3 Datasheet
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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21090H Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.
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