10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 µF, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Value, P/N or DWG 293D1106X9035D 1812Y224KXA 100B6R8CW 100B0R1BW 100B0R5BW 13668221 M
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5S21130/D MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N Channel Enhancement Mode Lateral MOSFETs MRF5S21130S Designed for W CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s .
To b e u s e d i n C l a s s A B f o r P C N P C S / c e l l u l a r r a d i o a n d W L
MRF5S21130SR3 Features
* m f = 2080 MHz f = 2200 MHz Zsource VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource Ω 2.87
* j9.49 3.13
* j9.86 4.05
* j10.90 4.80
* j11.75 5.55
* j11.87 Zload Ω 1.51
* j2.97 1.52
* j2.54 1.59
* j2.
Datasheet Details
MRF5S21130SR3, MRF5S21130R3
Motorola
439.29 KB
The rf mosfet line rf power field effect transistor.
This datasheet PDF includes multiple part numbers: MRF5S21130SR3, MRF5S21130R3.
Please refer to the document for exact specifications by model.
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