* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness
MRF5S21130HR3 Datasheet (421.96 KB)
MRF5S21130HR3
Freescale Semiconductor
421.96 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
MRF5S21130H Rev. 3, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
.
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The RF MOSFET Line
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