MRF5S21130HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF5S21130HR3, RF Power Field Effect Transistors

10 μF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 μF, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Part Number 293D1106X9035D 1812Y224KXA 100B6R8CW 100B0R1BW 100B0R5BW 13668221 Manufac

Freescale Semiconductor Technical Data MRF5S21130H Rev.

3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.

Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout

MRF5S21130HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Low Gold Plating Thickness