MRF5S21130HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data MRF5S21130H Rev.3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs .
10 μF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.

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Datasheet Specifications

Part number: MRF5S21130HR3
Manufacturer: Freescale Semiconductor
File Size: 421.96 KB
Datasheet: MRF5S21130HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness

Applications

* at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Po

MRF5S21130HR3 Distributors

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MRF5S21130HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF5S21130HR3-like datasheet