MRF5S21045MR1, MRF5S21045MBR1 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF5S21045MR1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev.1, 7/2005 RF Power Field Effect Transistors N - Channe.
220 nF Chip Capacitor (1812) 6.

MRF5S21045MR1 Features

* eescale Semiconductor ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W
* CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
* 30_C 25_C 85_C
* 30_C TC =
* 30_C IM3 85_C 25_C
* 30_C TYPICAL CHARACTE

MRF5S21045MR1 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, P

📥 Download Datasheet

MRF5S21045MR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF5S21045MR1, MRF5S21045MBR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF5S21045MR1, MRF5S21045MBR1
Manufacturer: Freescale Semiconductor
File Size: 560.47 KB
Datasheet: MRF5S21045MBR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF5S21045MR1, MRF5S21045MBR1.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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