MRF5S21045MBR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF5S21045MBR1, RF Power Field Effect Transistors

220 nF Chip Capacitor (1812) 6.8 pF 100B Chip Capacitors 6.8 µF Chip Capacitors (1812) 220 µF, 63 V Electrolytic Capacitor, Radial 1 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number 1812Y224KXA 100B6R8CW C

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev.

1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.

Typical 2 - carrier W - CDMA Performan

MRF5S21045MBR1 Features

* eescale Semiconductor ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W

* CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)

* 30_C 25_C 85_C

* 30_C TC =

* 30_C IM3 85_C 25_C

* 30_C TYPICAL CHARACTE