22 μF, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 μF, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Part Number TAJE226M035R 100B6R8CW 100B1R8BW 1812Y224KXA
www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21150H Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volt
MRF5S21150HSR3 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness
MRF5S21150HR3_FreescaleSemiconductor.pdf
Datasheet Details
MRF5S21150HSR3, MRF5S21150HR3
Freescale Semiconductor
408.51 KB
Rf power field effect transistors.
This datasheet PDF includes multiple part numbers: MRF5S21150HSR3, MRF5S21150HR3.
Please refer to the document for exact specifications by model.
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