Freescale Semiconductor Technical Data MRF5S21130H Rev.
3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout