MRF373ALR1 RF Power Field Effect Transistors

Motorola Inc

Description

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel E.
C1, C2 18 pF Chip Capacitors C3 12 pF Chip Capacitor C4 C5, C10 C6 C7 C8 1.

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Datasheet Specifications

Part number: MRF373ALR1
Manufacturer: Motorola Inc
File Size: 397.59 KB
Datasheet: MRF373ALR1_MotorolaInc.pdf
Description: RF Power Field Effect Transistors

Features

* Integrated ESD Protection
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters G
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
* RoHS Compliant
* In Tape and Reel. R1 =

Applications

* with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applica- tions in 28/32 volt transmitter equipment.
* Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power

MRF373ALR1 Distributors

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MRF373ALR1 Power Field Effect Transistors Motorola Inc

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