MRF373ALR1 Datasheet (Motorola Inc) - RF Power Field Effect Transistors

MRF373ALR1, RF Power Field Effect Transistors

C1, C2 18 pF Chip Capacitors C3 12 pF Chip Capacitor C4 C5, C10 C6 C7 C8 1.8 pF Chip Capacitor 51 pF Chip Capacitors 0.3 pF Chip Capacitor (Used only on the MRF373AS) 15 pF Chip Capacitor 10 pF Chip Capacitor C9 2.7 pF Chip Capacitor C11 0.5 pF Chip Capacitor C12 1000 pF Chip Capacitor C13

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applica- tions in 28/32 volt transmitter equipment.

Typical CW Performance at 860 MHz,

MRF373ALR1 Features

* Integrated ESD Protection

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters G

* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

* RoHS Compliant

* In Tape and Reel. R1 =