Datasheet Details
- Part number
- MRF373ALR1
- Manufacturer
- Motorola Inc
- File Size
- 397.59 KB
- Datasheet
- MRF373ALR1_MotorolaInc.pdf
- Description
- RF Power Field Effect Transistors
MRF373ALR1 Description
NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel E.
C1, C2
18 pF Chip Capacitors
C3 12 pF Chip Capacitor
C4 C5, C10 C6 C7 C8
1.
MRF373ALR1 Features
* Integrated ESD Protection
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal
Impedance Parameters
G
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
* RoHS Compliant
* In Tape and Reel. R1 =
MRF373ALR1 Applications
* with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
* Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power
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