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MRF373SR1, MRF373R1 Datasheet - Motorola

MRF373SR1 RF Power Field Effect Transistors

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 860 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 28 volt transmitter eq.

MRF373SR1 Features

* ully inserted. Ground Input (50 ohm microstrip) 55 mil slot cut out to accept Balun Figure 10. MRF373SR1 Broadband Push

* Pull Component Layout ARCHIVED 2005 MOTOROLA RF DEVICE DATA MRF373R1 MRF373SR1 7 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 2. MRF373SR1 Bro

MRF373R1-Motorola.pdf

This datasheet PDF includes multiple part numbers: MRF373SR1, MRF373R1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

MRF373SR1, MRF373R1

Manufacturer:

Motorola

File Size:

789.36 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF373SR1, MRF373R1.
Please refer to the document for exact specifications by model.

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TAGS

MRF373SR1 MRF373R1 Power Field Effect Transistors Motorola

MRF373SR1 Distributor