MRF373SR1, MRF373R1 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF373SR1, MRF373R1, RF Power Field Effect Transistors

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC.

2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 860 MHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 28 volt transmitter eq

MRF373SR1 Features

* ully inserted. Ground Input (50 ohm microstrip) 55 mil slot cut out to accept Balun Figure 10. MRF373SR1 Broadband Push

* Pull Component Layout ARCHIVED 2005 MOTOROLA RF DEVICE DATA MRF373R1 MRF373SR1 7 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 2. MRF373SR1 Bro