MRF377HR3 RF Power Field-Effect Transistors

Freescale Semiconductor

Description

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field *Effect Transistor N *Channe.

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Datasheet Specifications

Part number: MRF377HR3
Manufacturer: Freescale Semiconductor
File Size: 1.28 MB
Datasheet: MRF377HR3_FreescaleSemiconductor.pdf
Description: RF Power Field-Effect Transistors

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Device Designed for Push
* Pull Operation Only
* Integrated ESD Protection
* Excellent Thermal Stability
* Lower Thermal Resis

Applications

* with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common source amplifier applications in 32 volt digital television transmitter equipment.
* Typical Broadband DVBT OFDM Performance @ 470
* 860 MHz,

MRF377HR3 Distributors

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MRF377HR3 Power Field-Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF377HR3-like datasheet