MRF377HR3 Datasheet (Freescale Semiconductor) - RF Power Field-Effect Transistors

MRF377HR3, RF Power Field-Effect Transistors

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 32 volt digital television transmitter equipment.

Typical B

MRF377HR3 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Internally Matched for Ease of Use

* Device Designed for Push

* Pull Operation Only

* Integrated ESD Protection

* Excellent Thermal Stability

* Lower Thermal Resis