MRF1550FNT1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF1550N Rev.11, 9/2006 RF Power Field Effect Transistors N - Channel.

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Datasheet Specifications

Part number: MRF1550FNT1
Manufacturer: Freescale Semiconductor
File Size: 315.17 KB
Datasheet: MRF1550FNT1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Features

* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Broadband - Full Power Across the Band: 135 - 175 MHz
* Broadband Demonstration Amplifier Information Available Upon Request
* 200_C Capable Plastic Pack

Applications

* with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment.
* Specified Performance @ 175 MHz, 12.5 Volts Output Power
* 50 Watts Power Gain

MRF1550FNT1 Distributors

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MRF1550FNT1 Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor

Freescale Semiconductor MRF1550FNT1-like datasheet