MRF1550FNT1 Datasheet - Freescale Semiconductor

MRF1550FNT1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 11, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. Specified Performance @ 175 MHz, 12.5 Volts Outpu.

MRF1550FNT1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Broadband - Full Power Across the Band: 135 - 175 MHz

* Broadband Demonstration Amplifier Information Available Upon Request

* 200_C Capable Plastic Pack

MRF1550FNT1_FreescaleSemiconductor.pdf