MRF1517NT1 Datasheet - Freescale Semiconductor

MRF1517NT1 RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. D Specified Performance @ 520 MHz, 7.5 Volts Output Power 8 Watts Po.

MRF1517NT1 Features

* Characterized with Series Equivalent Large - Signal G Impedance Parameters

* Excellent Thermal Stability

* Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request

* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

* Availab

MRF1517NT1 Datasheet (304.12 KB)

MRF1517NT1 Datasheet Preview — Preview of MRF1517NT1 PDF

Datasheet Details

Part number:

MRF1517NT1

Manufacturer:

Freescale Semiconductor

File Size:

304.12 KB

Description:

Rf power field effect transistor.

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MRF1517NT1 Power Field Effect Transistor Freescale Semiconductor

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