MRF1517NT1 - RF Power Field Effect Transistor
Freescale Semiconductor Technical Data Document Number: MRF1517N Rev.
5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz.
The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment.
D Specified Performance @ 520 MHz, 7.5 Volts Output Power 8 Watts Po
MRF1517NT1 Features
* Characterized with Series Equivalent Large - Signal G Impedance Parameters
* Excellent Thermal Stability
* Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* Availab
