MRF1517NT1 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF1517N Rev.5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lat.

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Datasheet Specifications

Part number: MRF1517NT1
Manufacturer: Freescale Semiconductor
File Size: 304.12 KB
Datasheet: MRF1517NT1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* Characterized with Series Equivalent Large - Signal G Impedance Parameters
* Excellent Thermal Stability
* Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* Availab

Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. D
* Specified Performance @ 520 MHz, 7.5 Volts Output Power
* 8 Watts Power Gain
* 11 dB

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MRF1517NT1 Power Field Effect Transistor Freescale Semiconductor

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