MRF1517NT1 - RF Power Field Effect Transistor

Freescale Semiconductor

MRF1517NT1 Description

Freescale Semiconductor Technical Data Document Number: MRF1517N Rev.5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lat.

MRF1517NT1 Features

* Characterized with Series Equivalent Large - Signal G Impedance Parameters
* Excellent Thermal Stability
* Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* Availab

MRF1517NT1 Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. D
* Specified Performance @ 520 MHz, 7.5 Volts Output Power
* 8 Watts Power Gain
* 11 dB

📥 Download Datasheet

MRF1517NT1 Datasheet Preview — Preview of MRF1517NT1 PDF

Datasheet Details

Part number: MRF1517NT1
Manufacturer: Freescale Semiconductor
File Size: 304.12 KB
Datasheet: MRF1517NT1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

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Power Field Effect Transistor Freescale Semiconductor

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