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MRF151 - RF Power Field-Effect Transistor

MRF151 Description

MRF151 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET .
and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz.

MRF151 Features

* Guaranteed Performance at 30 MHz, 50 V:
* Output Power
* 150 W
* Gain
* 18 dB (22 dB Typ)
* Efficiency
* 40% Typical Performance at 175 MHz, 50 V:
* Output Power
* 150 W
* Gain
* 13 dB
* Low Thermal Resistance
* Ruggedness Tested at

MRF151 Applications

* Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Rev. V1 1 M/A-COM Technology Solutions Inc. (MACOM) and

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Datasheet Details

Part number
MRF151
Manufacturer
MACOM
File Size
839.37 KB
Datasheet
MRF151-MACOM.pdf
Description
RF Power Field-Effect Transistor

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Power Field-Effect Transistor MACOM
MACOM MRF151-like datasheet