MRF1517T1 - RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1517/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz.
The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 7.5 volt portable FM equipment.
MRF1517T1 Features
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* 20 VDD = 7.5 Vdc Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1517T1 7 TYPICAL CHARACTERISTICS, 440
* 480 MHz 17 440 MHz 15 Eff, DRAIN EFFICIENCY (%) 460 MHz 13 GAIN (dB) 480 MHz
