MRF1517T1 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

Motorola

Description

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1517/D The RF MOSFET Line RF Power Field Effe.

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Datasheet Specifications

Part number: MRF1517T1
Manufacturer: Motorola
File Size: 243.61 KB
Datasheet: MRF1517T1_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

Features

* >
* 20 VDD = 7.5 Vdc Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1517T1 7 TYPICAL CHARACTERISTICS, 440
* 480 MHz 17 440 MHz 15 Eff, DRAIN EFFICIENCY (%) 460 MHz 13 GAIN (dB) 480 MHz

Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 7.5 volt portable FM equipment.
* Specified Performance @ 520 MHz, 7.5 Volts D Output Power
* 8 Watts Power Gain

MRF1517T1 Distributors

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MRF1517T1 POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET Motorola

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