* >
* 20 VDD = 7.5 Vdc Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1517T1 7 TYPICAL CHARACTERISTICS, 440
* 480 MHz 17 440 MHz 15 Eff, DRAIN EFFICIENCY (%) 460 MHz 13 GAIN (dB) 480 MHz
MRF1517T1 Datasheet (243.61 KB)
MRF1517T1
Motorola
243.61 KB
Rf power field effect transistors n-channel enhancement-mode lateral mosfet.
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1517/D
The RF MOSFET Line
RF Power Field Effe.
📁 Related Datasheet
MRF1517NT1 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF151 RF Power Field-Effect Transistor (MACOM)
MRF151 N-CHANNEL BROADBAND RF POWER MOSFET (Tyco Electronics)
MRF151 N-CHANNEL BROADBAND RF POWER MOSFET (Motorola)
MRF1511NT1 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET (Motorola)
MRF1511T1 RF Power Field Effect Transistor (Motorola)
MRF1513NT1 RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET (Freescale Semiconductor)
MRF1513T1 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET (Motorola)
MRF1518NT1 RF Power Field Effect Transistor (Motorola)
MRF1518T1 RF Power Field Effect Transistor (Motorola)
TAGS
Image Gallery
