MRF1511NT1 - RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1511 Rev.
3, 3/2005 RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz.
The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 7.5 volt portable FM equipment.
D Specified Performance @ 175 MHz, 7.5 V
MRF1511NT1 Features
* d impedance at given output power, voltage, frequency, and ηD > 50 %. ZOL
* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Note: ZOL
* was chosen based on tradeoffs between gain, drain efficiency, and device stabi
