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MRF1511NT1 - RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

MRF1511NT1 Description

( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1511 Rev.3, 3/2005 RF Power Field Effect Transistor N *Chann.

MRF1511NT1 Features

* d impedance at given output power, voltage, frequency, and ηD > 50 %. ZOL
* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Note: ZOL
* was chosen based on tradeoffs between gain, drain efficiency, and device stabi

MRF1511NT1 Applications

* at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 7.5 volt portable FM equipment. D
* Specified Performance @ 175 MHz, 7.5 Volts Output Power
* 8 Watts Power Gain

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Datasheet Details

Part number
MRF1511NT1
Manufacturer
Motorola
File Size
280.53 KB
Datasheet
MRF1511NT1_Motorola.pdf
Description
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

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POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET Motorola
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