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MRF1513T1 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

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Description

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1513/D The RF MOSFET Line RF Power Field Effe.

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Datasheet Specifications

Part number
MRF1513T1
Manufacturer
Motorola
File Size
304.50 KB
Datasheet
MRF1513T1_Motorola.pdf
Description
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

Features

* S) 4 5 Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1513T1 7 TYPICAL CHARA

Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. D
* Specified Performance @ 520 MHz, 12.5 Volts Output Power
* 3 Wat

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