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MRF1511T1 - RF Power Field Effect Transistor

MRF1511T1 Description

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1511/D The RF MOSFET Line RF Power Field Effe.

MRF1511T1 Features

* utput Matching Network Z in Z
* OL Figure 19. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF1511T1 7 Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA f MHz 30 50 100 150 200 250 300 350 400 450 500 S11 |S11| 0.88 0.88 0.87 0.87 0.87 0.87

MRF1511T1 Applications

* at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 7.5 volt portable FM equipment.
* Specified Performance @ 175 MHz, 7.5 Volts Output Power
* 8 Watts Power Gain

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Datasheet Details

Part number
MRF1511T1
Manufacturer
Motorola
File Size
504.97 KB
Datasheet
MRF1511T1_Motorola.pdf
Description
RF Power Field Effect Transistor

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Power Field Effect Transistor Motorola
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