MRF1511T1 - RF Power Field Effect Transistor
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1511/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz.
The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 7.5 volt portable FM equipment.
MRF1511T1 Features
* utput Matching Network Z in Z
* OL Figure 19. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF1511T1 7 Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA f MHz 30 50 100 150 200 250 300 350 400 450 500 S11 |S11| 0.88 0.88 0.87 0.87 0.87 0.87
