MRF151G RF Power Field-Effect Transistor

MACOM

Description

MRF151G RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET .
and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz.

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Datasheet Specifications

Part number: MRF151G
Manufacturer: MACOM
File Size: 877.96 KB
Datasheet: MRF151G-MACOM.pdf
Description: RF Power Field-Effect Transistor

Features

* Guaranteed Performance at 175 MHz, 50 V:
* Output Power
* 300 W
* Gain
* 14 dB (16 dB Typ)
* Efficiency
* 50%
* Low Thermal Resistance
* 0.35°C/W
* Ruggedness Tested at Rated Output Power
* Nitride Passivated Die for Enhanced Reliability Packa

Applications

* Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Rev. V1 1 M/A-COM Technology Solutions Inc. (MACOM) and

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MRF151G Power Field-Effect Transistor MACOM

MACOM MRF151G-like datasheet