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MRF151G

RF Power Field-Effect Transistor

MRF151G Features

* Guaranteed Performance at 175 MHz, 50 V:

* Output Power

* 300 W

* Gain

* 14 dB (16 dB Typ)

* Efficiency

* 50%

* Low Thermal Resistance

* 0.35°C/W

* Ruggedness Tested at Rated Output Power

* Nitride Passivated Die for Enhanced Reliability Packa

MRF151G General Description

and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Rev. V1 1 M/A-COM Technology Solutions .

MRF151G Datasheet (877.96 KB)

Preview of MRF151G PDF

Datasheet Details

Part number:

MRF151G

Manufacturer:

MACOM

File Size:

877.96 KB

Description:

Rf power field-effect transistor.

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MRF151G Power Field-Effect Transistor MACOM

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