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MRF151G - RF Power Field-Effect Transistor

MRF151G Description

MRF151G RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET .
and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz.

MRF151G Features

* Guaranteed Performance at 175 MHz, 50 V:
* Output Power
* 300 W
* Gain
* 14 dB (16 dB Typ)
* Efficiency
* 50%
* Low Thermal Resistance
* 0.35°C/W
* Ruggedness Tested at Rated Output Power
* Nitride Passivated Die for Enhanced Reliability Packa

MRF151G Applications

* Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Rev. V1 1 M/A-COM Technology Solutions Inc. (MACOM) and

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Datasheet Details

Part number
MRF151G
Manufacturer
MACOM
File Size
877.96 KB
Datasheet
MRF151G-MACOM.pdf
Description
RF Power Field-Effect Transistor

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Power Field-Effect Transistor MACOM
MACOM MRF151G-like datasheet