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MRF1570NT1 RF Power Field Effect Transistors

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Description

Freescale Semiconductor Technical Data Document Number: MRF1570N Rev.9, 6/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode La.

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Datasheet Specifications

Part number
MRF1570NT1
Manufacturer
Freescale Semiconductor
File Size
653.70 KB
Datasheet
MRF1570NT1_FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistors

Features

* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Broadband - Full Power Across the Band: 135 - 175 MHz www. DataSheet4U. com 400 - 470 MHz
* Broadband Demonstration Amplifier Information Available Upon Request

Applications

* with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment.
* Specified Performance @ 470 MHz, 12.5 Volts Output Power
* 70 Watts Power Gain

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