MRF377 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTOR

MRF377, RF POWER FIELD EFFECT TRANSISTOR

Ferrite Beads, Surface Mount, 11 Ω (0805) 0.8 *1GHz Xinger Balun 33 pF Chip Capacitor (0805) 2.7 pF Chip Capacitor (0603) 12 pF Chip Capacitor (0805) 6.8 pF Chip Capacitors (0805) 2.7 pF Chip Capacitor (0805) 3.3 pF Chip Capacitors (0805) 2.2 µF, 50 V Chip Capacitors 0.01 µF, 100 V Chip Capac

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF377/D The RF MOSFET Line RF Power Field-Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

The high gain and broadband performance of this device make it ideal for large signal, common source amplifier applications in 32 volt digital television transmitter equipment.

Typical Broadband DVBT OFDM

MRF377 Features

* urce Ω 4.66

* j5.90 4.38

* j5.64 3.93

* j5.33 Zload Ω 8.59

* j4.22 9.36

* j4.95 9.39

* j6.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanc