MRF377 RF POWER FIELD EFFECT TRANSISTOR

Motorola

Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF377/D The RF MOSFET Line RF Po.
Ferrite Beads, Surface Mount, 11 Ω (0805) 0. 1GHz Xinger Balun 33 pF Chip Capacitor (0805) 2.

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Datasheet Specifications

Part number: MRF377
Manufacturer: Motorola
File Size: 1.05 MB
Datasheet: MRF377_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTOR

Features

* urce Ω 4.66
* j5.90 4.38
* j5.64 3.93
* j5.33 Zload Ω 8.59
* j4.22 9.36
* j4.95 9.39
* j6.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanc

Applications

* with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large
* signal, common source amplifier applications in 32 volt digital television transmitter equipment.
* Typical Broadband DVBT OFDM Performance @ 470
* 860 MHz, 32 V

MRF377 Distributors

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MRF377 POWER FIELD EFFECT TRANSISTOR Motorola

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