Description
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These device.
Features
* D G
* Mirror pinout versions (A and B) to simplify use in a push
* pull, two
* up configuration
S
* Characterized from 30 to 50 V
Applications
* The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
Pout
Gps
D
(W)
(dB)
(%)
13.56 (1) 27 (2)
40.68 (3) 50 (4)
81.36 (5) 144 (6) 230 (7)
CW
Pulse (100 sec, 20% Duty Cycle)
320 CW 330 CW 330 CW 320 CW