MRF300BN, MRF300AN Datasheet - NXP

MRF300BN RF Power LDMOS Transistors

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 .

MRF300BN Features

* D G

* Mirror pinout versions (A and B) to simplify use in a push

* pull, two

* up configuration S

* Characterized from 30 to 50 V

* Suitable for linear application

* Integrated ESD protection with greater negative gate

* source voltage range for improved Clas

MRF300AN-NXP.pdf