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MRF300BN, MRF300AN - RF Power LDMOS Transistors

MRF300BN Description

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These device.

MRF300BN Features

* D G
* Mirror pinout versions (A and B) to simplify use in a push
* pull, two
* up configuration S
* Characterized from 30 to 50 V

MRF300BN Applications

* The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 144 (6) 230 (7) CW Pulse (100 sec, 20% Duty Cycle) 320 CW 330 CW 330 CW 320 CW

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF300BN, MRF300AN. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF300BN, MRF300AN
Manufacturer
NXP ↗
File Size
1.25 MB
Datasheet
MRF300AN-NXP.pdf
Description
RF Power LDMOS Transistors
Note
This datasheet PDF includes multiple part numbers: MRF300BN, MRF300AN.
Please refer to the document for exact specifications by model.

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Power LDMOS Transistors NXP
NXP MRF300BN-like datasheet