MRF300AN Datasheet - NXP

MRF300AN, RF Power LDMOS Transistors

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These device.

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MRF300AN-NXP.pdf

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Datasheet Details

Part number:

MRF300AN

Manufacturer:

NXP ↗

File Size:

1.25 MB

Description:

RF Power LDMOS Transistors

Features

* D G
* Mirror pinout versions (A and B) to simplify use in a push
* pull, two
* up configuration S
* Characterized from 30 to 50 V

Applications

* The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 144 (6) 230 (7) CW Pulse (100 sec, 20% Duty Cycle) 320 CW 330 CW 330 CW 320 CW

MRF300AN Distributors

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MRF300AN Power LDMOS Transistors NXP

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