MRF9002NR2 - RF Power FET
33 pF Chip Capacitors (0805) 1.0 μF, 35 V Tantalum Capacitors, B Case, Kemet 8.2 pF Chip Capacitor (0805) 10 pF Chip Capacitors (0805) 2.7 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 12 nH Chip Inductors (0805) 0 W Chip Resistors (0805) 1.16 x 28.5 mm Microstrip 0.65 x 5.6 mm Microstrip 0
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev.
8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
The device is in a PFP - 16 Power Flat Pack package whi
MRF9002NR2 Features
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* RoHS Compliant
* In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MRF9002NR2
