Description
LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhan.
Features
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ N
Applications
* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 28 volt base station equipment.
* Typical Two
* Tone Performance at 945 MHz, 28 Volts Output Power
