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Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 28 volt base station equipment.
• Typical Two--Tone Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 18.
MRF9045LSR1 Datasheet
