MRF904 Datasheet | Microsemi

Features - - - Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 d B (typ) @ f = 450 MHz 7 d B (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 d B (typ) @ f = 450 MHz - High FT - 4 GHz (typ) @ IC = 15 m Adc 1 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION : Designed primarily for use IN High Gain, low noise general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 25 3.0 30 Unit Vdc Vdc Vdc m A Thermal Data D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 m Watts m W/ ºC MSC1324.PDF 10-25-99 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector-Base Breakdown Voltage (IC= .1 m Adc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.1 m Adc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 15 25 3.0 Value Typ. Max. 50 Unit Vdc Vdc Vdc n A (on) HFE DC Current Gain (IC = 5.0 m Adc, VCE = 5 Vdc) 30 200 - DYNAMIC Symbol f T Test Conditions Min. Current-Gain - Bandwidth Product (IC = 15 m Adc, VCE = 10 Vdc, f = 1 GHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Noise Figure (IC = 5.0 m Adc, VCE = 6.0 Vdc, f = 450 MHz) Value Typ. 4.0 1.0 1.5 Max. 1.5 Unit GHz p F d B CCB NF MSC1324.PDF 10-25-99 Functional Symbol Test Conditions Min. GU max Maximum Unilateral Gain (1) (IC = 5.0 m Adc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 m Adc, VCE = 6.0 Vdc, f = 1 GHz) Maximum Available Gain (1) (IC = 5.0 m Adc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 m Adc, VCE = 6.0 Vdc, f = 1 GHz) Maximum Available Gain (1) (IC = 5.0 m Adc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 m Adc, VCE = 6.0 Vdc, f = 1 GHz) 9.5 Value Typ. 11 7 10.5 6.5 11 7 Max. Unit d B |21| 2 d B MAG d B (1) Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2) Table 1. mon...