The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MRF904
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C Storage Temperature
Symbol v CEO VCBO Vebo
'C
PD
Tstg
Value 15 25 3.0 30 0.2 1.14
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watt mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Iq = 0)
Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain dC = 5.0 mAdc, Vce = 5.
MRF904 Datasheet
