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MRF904 Datasheet Rf & Microwave Discrete Low Power Transistors

Manufacturer: Advanced Power Technology

Overview: 140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS.

Datasheet Details

Part number MRF904
Manufacturer Advanced Power Technology
File Size 111.02 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet MRF904-AdvancedPowerTechnology.pdf

General Description

: Designed primarily for use in High Gain, low noise general-purpose amplifiers.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data PD TJMAX TSTORAGE Total Device Dissipation @ TA = 25º C Derate above 25º C Junction Temperature Storage Temperature Value 15 25 3.0 30 Unit Vdc Vdc Vdc mA 200 1.14 200 -65 to +200 mWatts mW/ ºC °C °C Advanced Power Technology reserves the right to change, withou

Key Features

  • Silicon NPN, high Frequency, To-72 packaged, Transistor.
  • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz.
  • Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz.
  • High FT - 4 GHz (typ) @ IC = 15 mAdc 2 13 4 1. Emitter 2. Base 3. Collector 4. Case TO-72.

MRF904 Distributor