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MRF904 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

Designed primarily for use in High Gain, low noise general-purpose amplifiers.

Key Features

  • Silicon NPN, high Frequency, To-72 packaged, Transistor.
  • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz.
  • Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz.
  • High FT - 4 GHz (typ) @ IC = 15 mAdc 2 13 4 1. Emitter 2. Base 3. Collector 4. Case TO-72.

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Datasheet Details

Part number MRF904
Manufacturer Advanced Power Technology
File Size 111.02 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet MRF904 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF904 Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz • High FT - 4 GHz (typ) @ IC = 15 mAdc 2 13 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use in High Gain, low noise general-purpose amplifiers.