Datasheet4U Logo Datasheet4U.com

MRF9030R1 Datasheet - Motorola

MRF9030R1 RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment. Typical Two.

MRF9030R1 Features

* .19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K R (LID) B M ccc N (LID) M T A M B M ccc M T A C M B M H F E S (INSULATOR)

MRF9030R1_Motorola.pdf

Preview of MRF9030R1 PDF
MRF9030R1 Datasheet Preview Page 2 MRF9030R1 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF9030R1

Manufacturer:

Motorola

File Size:

404.83 KB

Description:

Rf power field effect transistors.

MRF9030R1 Distributor

📁 Related Datasheet

MRF9030LR1 RF Power Field Effect Transistors (Motorola)

MRF9030LR1 RF Power Field Effect Transistor (Freescale Semiconductor)

MRF9030LSR1 RF Power Field Effect Transistors (Motorola)

MRF9030MBR1 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF9030MBR1 RF POWER FIELD EFFECT TRANSISTORS (Freescale Semiconductor)

MRF9030MR1 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF9030MR1 RF POWER FIELD EFFECT TRANSISTORS (Freescale Semiconductor)

MRF9030NBR1 RF Power Field Effect Transistors (Freescale Semiconductor)

TAGS

MRF9030R1 MRF9030R1 POWER FIELD EFFECT TRANSISTORS Motorola