MRF9030R1 - RF POWER FIELD EFFECT TRANSISTORS

Motorola

MRF9030R1 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N

MRF9030R1 Features

* .19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K R (LID) B M ccc N (LID) M T A M B M ccc M T A C M B M H F E S (INSULATOR)

MRF9030R1 Applications

* with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 26 volt base station equipment.
* Typical Two
* Tone Performance at 945 MHz, 26 Volts Output Power

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Datasheet Details

Part number: MRF9030R1
Manufacturer: Motorola
File Size: 404.83 KB
Datasheet: MRF9030R1_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS

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POWER FIELD EFFECT TRANSISTORS Motorola

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