MRF9030R1 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTORS

MRF9030R1, RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

Typical Two

MRF9030R1 Features

* .19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K R (LID) B M ccc N (LID) M T A M B M ccc M T A C M B M H F E S (INSULATOR)