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MRF9030SR1 Datasheet - Motorola

MRF9030SR1 RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment. Typical Two.

MRF9030SR1 Features

* .19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K R (LID) B M ccc N (LID) M T A M B M ccc M T A C M B M H F E S (INSULATOR)

MRF9030SR1 Datasheet (404.83 KB)

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Datasheet Details

Part number:

MRF9030SR1

Manufacturer:

Motorola

File Size:

404.83 KB

Description:

Rf power field effect transistors.

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MRF9030SR1 POWER FIELD EFFECT TRANSISTORS Motorola

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