Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N
Features
* .19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
B
(FLANGE) 2X
2
D bbb M T A
2X M
K R
(LID)
B
M
ccc N
(LID)
M
T A
M
B
M
ccc
M
T A C
M
B
M
H
F
E
S
(INSULATOR)
Applications
* with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 26 volt base station equipment.
* Typical Two
* Tone Performance at 945 MHz, 26 Volts Output Power
