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MRF9030SR1, MRF9030R1 Datasheet - Motorola

MRF9030SR1 RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment. Typical Two.

MRF9030SR1 Features

* .19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K R (LID) B M ccc N (LID) M T A M B M ccc M T A C M B M H F E S (INSULATOR)

MRF9030R1_Motorola.pdf

This datasheet PDF includes multiple part numbers: MRF9030SR1, MRF9030R1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

MRF9030SR1, MRF9030R1

Manufacturer:

Motorola

File Size:

404.83 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF9030SR1, MRF9030R1.
Please refer to the document for exact specifications by model.

MRF9030SR1 Distributor

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MRF9030SR1 MRF9030R1 POWER FIELD EFFECT TRANSISTORS Motorola