MRF9030LR1 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF9030LR1, RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF9030/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.

Typical Two - Tone Performance at 945 MHz, 26 Volts Outpu

MRF9030LR1 Features

* st Output Matching Network Z source Z load Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9030LR1 MRF9030LSR1 7 Freescale Semiconductor, Inc. NOTES www.DataSheet4U.com Freescale Semiconduct