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MRF9080 RF POWER FIELD EFFECT TRANSISTORS

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N 4.

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Datasheet Specifications

Part number
MRF9080
Manufacturer
Motorola
File Size
476.71 KB
Datasheet
MRF9080_Motorola.pdf
Description
RF POWER FIELD EFFECT TRANSISTORS

Features

* F9080SR3 MRF9080LSR3 9 NOTES www. datasheet4u. com MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 1 2X Q bbb M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS M

Applications

* in 26 volt base station equipment.
* Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55%
* Internally Matched, Controlled Q, for Ease of Use
* High Gain, High Efficiency and High Lin

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