MRFG35003NT1, MRFG35003MT1 Datasheet - Freescale Semiconductor

MRFG35003NT1 RF Power Field Effect Transistors

3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K pF Chip Capacitors 22 µF Tantalum Capacitors 1.0 pF Chip Capacitor 15.0 pF Chip Capacitor 4.7 nH Chip Inductor 8.2 nH Chip Inductor 75 W,.

www.DataSheet4U.com Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications. Typical W - CDMA Performance: - 42 dBc A.

MRFG35003NT1 Features

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MRFG35003MT1_FreescaleSemiconductor.pdf

MRFG35003NT1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFG35003NT1, MRFG35003MT1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRFG35003NT1, MRFG35003MT1

Manufacturer:

Freescale Semiconductor

File Size:

128.28 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRFG35003NT1, MRFG35003MT1.
Please refer to the document for exact specifications by model.

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MRFG35003NT1 MRFG35003MT1 Power Field Effect Transistors Freescale Semiconductor

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