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MRFG35003NT1, MRFG35003MT1 Datasheet - Freescale Semiconductor

MRFG35003NT1 RF Power Field Effect Transistors

3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K pF Chip Capacitors 22 µF Tantalum Capacitors 1.0 pF Chip Capacitor 15.0 pF Chip Capacitor 4.7 nH Chip Inductor 8.2 nH Chip Inductor 75 W,.

www.DataSheet4U.com Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications. Typical W - CDMA Performance: - 42 dBc A.

MRFG35003NT1 Features

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MRFG35003MT1_FreescaleSemiconductor.pdf