Description
The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOS
TM
high voltage process that is designed to deliver high levels of
performance and robustness in switching applications.By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features
- VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.29Ω 17.2nC 3.6µJ
D
G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter AOT15S65/AOB15S65 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy
C C
AOTF15S65 650 ±30 15.
- 10.
- 60 2.4 86 173
AOTF15S65L
Units V V
VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT15S65/AOB15S65 65 0.5 0.6 208.