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TK6P60W

N-Channel MOSFET

TK6P60W Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute

TK6P60W Datasheet (356.88 KB)

Preview of TK6P60W PDF

Datasheet Details

Part number:

TK6P60W

Manufacturer:

Freescale

File Size:

356.88 KB

Description:

N-channel mosfet.

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TK6P60W N-Channel MOSFET Freescale

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