20N60S1 Datasheet (Fuji Electric) - N-Channel enhancement mode power MOSFET

20N60S1, N-Channel enhancement mode power MOSFET

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR E

20N60S1 Features

* Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Outline Drawings [mm] TO-220 3.6± 0.2 10 +0.5 0 4.5±0.2 1.3±0.2 Applications UPS Server Telecom Power conditioner system Power supply 3.6 ±0.2 13.5 min. 1.2 ± 0.2 1 2.54 ± 0.2 23 0.8 +0.2 -0.1