20N60C2
Infineon ↗ Technologies
201.85kb
Power transistor.
TAGS
📁 Related Datasheet
20N60C3 - N-Channel IGBT
(Intersil Corporation)
Data Sheet
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
January 2000 File Number 4492.2
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated hig.
20N60C3 - Power Transistor
(Infineon)
633 1 & 63, 1 & 63$ 1 &
&RRO026 3RZHU7UDQVLVWRU
)HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •:RUOGZLGHEHVW5'6 RQ LQ72 •.
20N60C5 - Power MOSFET
(IXYS)
IXKH 20N60C5 IXKP 20N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
ID25 = 20 A
VDSS
=.
20N60CFD - Cool MOS Power Transistor
(Infineon)
0MMJ 57;W 8MTCO
20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
(ROUM)
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
20N60 - IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
20N60 - 600V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 20N60
20A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N60 is an N-channel enhancement mode power MOSFET using .
20N60 - N-Channel MOSFET
(VBsemi)
20N60-VB
20N60-VB Datasheet
N-Channel 650 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (.
20N60 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, SuperFET)
600 V, 20 A, 190 mW
FCP20N60, FCPF20N60
Description SuperFET MOSFET is onsemi’s first generation of high voltage
super−j.
20N60A - IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
