20N60BD1 Datasheet - IXYS Corporation

20N60BD1 IGBT

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 +150 150 -.

20N60BD1 Features

* International standard packages

* High frequency IGBT and antiparallel FRED in one package

* High current handling capability

* HiPerFASTTM HDMOSTM process

* MOS Gate turn-on -drive simplicity Applications

* Uninterruptible power supplies (UPS)

20N60BD1_IXYSCorporation.pdf

20N60BD1 Datasheet Preview — Preview of 20N60BD1 PDF

Datasheet Details

Part number:

20N60BD1

Manufacturer:

IXYS Corporation

File Size:

54.26 KB

Description:

Igbt.

20N60BD1 Distributor

📁 Related Datasheet

20N60B IGBT (IXYS Corporation)

20N60 20A 600V N-channel Enhancement Mode Power MOSFET (ROUM)

20N60 IGBT (IXYS)

20N60 600V N-CHANNEL POWER MOSFET (UTC)

20N60 N-Channel MOSFET (VBsemi)

20N60 N-Channel MOSFET (ON Semiconductor)

20N60A IGBT (IXYS)

20N60A N-channel MOSFET (JieJie)

TAGS

20N60BD1 20N60BD1 IGBT IXYS Corporation