20N60BD1 Datasheet, igbt equivalent, IXYS Corporation

20N60BD1 Features

• Igbt
• International standard packages
• High frequency IGBT and antiparallel FRED in one package
• High current handling capability
• HiPerFASTTM HDMOSTM pro

PDF File Details

Part number:

20N60BD1

Manufacturer:

IXYS Corporation

File Size:

54.26kb

Download:

📄 Datasheet

Description:

Igbt.

20N60BD1 Application

• Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• AC motor speed contro

TAGS

20N60BD1

IXYS Corporation

📁 Related Datasheet

20N60B - IGBT (IXYS Corporation)
HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VG.

20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.

20N60 - IGBT (IXYS)
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.

20N60 - 600V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using .

20N60 - N-Channel MOSFET (VBsemi)
20N60-VB 20N60-VB Datasheet N-Channel 650 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (.

20N60 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, SuperFET) 600 V, 20 A, 190 mW FCP20N60, FCPF20N60 Description SuperFET MOSFET is onsemi’s first generation of high voltage super−j.

20N60A - IGBT (IXYS)
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.

20N60A - N-channel MOSFET (JieJie)
Description JMP N-channel MOSFET Features  600V,20A  RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A  Fast Switching  Improved dv/dt Capability  100% .

20N60A4D - HGTG20N60A4D (Fairchild Semiconductor)
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltag.

20N60A4D - N-Channel IGBT (ON Semiconductor)
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device bini.