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20N60A4D - HGTG20N60A4D

Fairchild Semiconductor

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Datasheet Details

Part number	20N60A4D
Manufacturer	Fairchild ↗ Semiconductor
File Size	175.11 KB
Description	HGTG20N60A4D
Datasheet	20N60A4D_FairchildSemiconductor.pdf

20N60A4D Product details

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching.

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Published: Jan 29, 2014 |