20N60C5 Datasheet - IXYS

20N60C5 Power MOSFET

IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS = 600 V R =DS(on) max 0.2 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 6.6 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0480 V Maximum Ratings 600 V ± 20 V 20 A 13 A 435 mJ 0.66 mJ 50 V/ns Symbol RDSon VGS(th) I.

20N60C5 Features

* fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness

* Enhanced total power density Applications

* Switched mode power s

20N60C5 Datasheet (108.94 KB)