2SK2020-01MR Datasheet, Mos-fet, Fuji Electric

2SK2020-01MR Features

• Mos-fet High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 3Ω 3,5A 30W > Outline Draw

PDF File Details

Part number:

2SK2020-01MR

Manufacturer:

Fuji Electric

File Size:

204.46kb

Download:

📄 Datasheet

Description:

N-channel mos-fet.

2SK2020-01MR Application

• Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Rat

TAGS

2SK2020-01MR

Fuji Electric

📁 Related Datasheet

2SK2020-01MR - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching S.

2SK2020-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum .

2SK2021-01 - N-channel MOS-FET (Fuji Electric)
2SK2021-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2021-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo.

2SK2022-01M - N-channel MOS-FET (Fuji Electric)
2SK2022-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.

2SK2022-01M - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo.

2SK2023-01 - N-channel MOS-FET (Fuji Electric)
2SK2023-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2023-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo.

2SK2024-01 - Power MOSFET (Fuji Electric)
.

2SK2024-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK2024-01 DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed.