FMH23N50E - N-CHANNEL SILICON POWER MOSFET

Product Overview

Fuji Electric

Datasheet Details

Part number	FMH23N50E
Manufacturer	Fuji Electric
File Size	446.40 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMH23N50E Datasheet
Additional preview pages of the FMH23N50E datasheet.

Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Tch Temperature range Tstg Characteristics 500 500 ±23 ±92 ±30 23 767.3 31.5 9.3 100 2.50 315 150 -55 to + 150 Equiv

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-3P(Q).

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Published: Mar 7, 2012 |