FMV19N60E

N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMV19N60E Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

FMV19N60E General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Op.

FMV19N60E Datasheet (575.61 KB)

FMV19N60E Datasheet Preview — Preview of FMV19N60E PDF

Datasheet Details

Part number:

FMV19N60E

Manufacturer:

Fuji Electric

File Size:

575.61 KB

Description:

N-channel silicon power mosfet.

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FMV19N60E N-CHANNEL SILICON POWER MOSFET Fuji Electric

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FMV19N60E Features

FMV19N60E General Description

Datasheet Details

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Description:

FMV19N60E Distributor