FMV11N60E N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Description

www.DataSheet.co.kr FMV11N60E Super FAP-E3 series .
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repe.

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Datasheet Specifications

Part number: FMV11N60E
Manufacturer: Fuji Electric
File Size: 602.02 KB
Datasheet: FMV11N60E_FujiElectric.pdf
Description: N-CHANNEL SILICON POWER MOSFET

Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILIC

FMV11N60E Distributors

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FMV11N60E N-CHANNEL SILICON POWER MOSFET Fuji Electric

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