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FMV11N60E

N-CHANNEL SILICON POWER MOSFET

FMV11N60E Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILIC

FMV11N60E General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Ope.

FMV11N60E Datasheet (602.02 KB)

Preview of FMV11N60E PDF

Datasheet Details

Part number:

FMV11N60E

Manufacturer:

Fuji Electric

File Size:

602.02 KB

Description:

N-channel silicon power mosfet.

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FMV11N60E N-CHANNEL SILICON POWER MOSFET Fuji Electric

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